Producent |
Numer części |
Arkusz danych Date Size |
Szczegółowy opis |
Rohs Pb Free Lifecycle |
Strona internetowa |
Toshiba America Electronic Components
|
TPM1818-14
|
|
TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power
|
not_compliant no obsolete |
|
TPM1818-30
|
|
TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power
|
not_compliant no obsolete |
|
TPM1919-40
|
|
TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G6A, 3 PIN, FET RF Power
|
not_compliant no obsolete |
|
TPM1919-40-311
|
|
TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G6A, 2 PIN, FET RF Power
|
not_compliant no active |
|
TPM1919-60
|
|
TRANSISTOR L BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G6A, 2 PIN, FET RF Power
|
not_compliant unknown obsolete |
|
TPM1919-60-PAR
|
|
HI-PWR FET
|
unknown unknown contact_manufacturer |
|
TPM2323-14
|
|
TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power
|
not_compliant unknown obsolete |
|
TPM2323-30
|
|
TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power
|
not_compliant unknown obsolete |
|
TPM2626-14
|
|
TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power
|
not_compliant unknown obsolete |
|
TPM2626-30
|
|
TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power
|
not_compliant unknown obsolete |
|
TPM2626-30-301
|
|
TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power
|
not_compliant no active |
|
TPM2626-60
|
|
TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power
|
unknown unknown obsolete |
|